PINIP based high-speed high-extinction ratio micron-size silicon electrooptic modulator.

@article{Manipatruni2007PINIPBH,
  title={PINIP based high-speed high-extinction ratio micron-size silicon electrooptic modulator.},
  author={Sasikanth Manipatruni and Qianfan Xu and Michal Lipson},
  journal={Optics express},
  year={2007},
  volume={15 20},
  pages={13035-42}
}
We propose an electrooptic device in silicon based on a p-i-n-i-p device structure for charge transport. The proposed device exhibits carrier injection time of 10 ps and extraction time of 15 ps enabling 100 GHz operation. When integrated into a resonator the proposed micron-size device operates at 40 Gb/s with 12 dB extinction ratio and 4fJ/bit/micron-length power dissipation, limited in speed only by the photon lifetime of the resonator. 
Highly Cited
This paper has 38 citations. REVIEW CITATIONS

Citations

Publications citing this paper.
Showing 1-10 of 17 extracted citations

References

Publications referenced by this paper.
Showing 1-10 of 28 references

Electrical Modulator in High-Index-Contrast (HIC) Si-Waveguides," in Conference on Lasers and Electro-Optics

  • F. Gan, F. X. Kärtner, High-Speed
  • Technical Digest (CD) (Optical Society of America…
  • 2007
1 Excerpt

Electronic-photonic integrated circuits on the CMOS platform,

  • L. C. Kimerling, D. Ahn, +18 authors C. W. Wong
  • Proc. SPIE 6125,
  • 2006
1 Excerpt

Similar Papers

Loading similar papers…