PBTI mechanisms in La containing Hf-based oxides assessed by very Fast IV measurements

@article{Garros2010PBTIMI,
  title={PBTI mechanisms in La containing Hf-based oxides assessed by very Fast IV measurements},
  author={Xavier Garros and Lucas Brunet and M. Rafik and Jean Coignus and Gilles Reimbold and E. Vincent and Alain Bravaix and F. Boulanger},
  journal={2010 International Electron Devices Meeting},
  year={2010},
  pages={4.6.1-4.6.4}
}
PBTI in La-doped HfSiON/TiN stacks is investigated using Ultra Fast IV measurements. Excellent PBTI lifetime of these oxides is demonstrated. We also show that PBTI is explained only by trapping in stress induced defects and not by trapping in pre-existing ones. Dependence on oxide field, temperature activation and recovery of PBTI are also investigated and modeled. 

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