P1H-4 FBAR Characteristics with AlN Film Using MOCVD Method and Ru/Ta Electrode

Abstract

Film bulk acoustic resonator (FBAR) was fabricated using high oriented AlN(0002) film obtained through the metal-organic chemical vapor deposition (MOCVD) method. We used the Ru/Ta bottom electrode to improve the FBAR resonant characteristics because Ru has a high acoustic impedance and a hexagonal crystalline that is effective to obtaine the high oriented… (More)

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