Oxygen precipitation in silicon

@article{Craven1981OxygenPI,
  title={Oxygen precipitation in silicon},
  author={R O Craven},
  journal={1981 International Electron Devices Meeting},
  year={1981},
  pages={228-231}
}
  • R O Craven
  • Published 1981 in 1981 International Electron Devices Meeting
The behavior of oxygen in Czochralski grown silicon has been intensely studied in the last few years because of the beneficial and harmful effects that oxygen precipitates and oxygen precipitate-induced dislocation loops can have on the manufacture of electronic devices in silicon wafers. This paper will review four topics associated with the use of… CONTINUE READING