Oxygen passivation and reactivation of interface states introduced during Schottky diode fabrication on bulk n-type 6H–SiC

@article{Wyk2004OxygenPA,
  title={Oxygen passivation and reactivation of interface states introduced during Schottky diode fabrication on bulk n-type 6H–SiC},
  author={E. V. Wyk and A. Leitch},
  journal={Applied Surface Science},
  year={2004},
  volume={221},
  pages={415-420}
}
Abstract Typical and deviant Au or Au–Ge Schottky diodes fabricated via thermal (resistive) metallization on bulk 6H–SiC are boiled in 17.8 M Ω deionized water. Boiling of the typical devices (shown elsewhere to contain the p1-, p1*-, p2-, p3-, p5-, and possibly the t1-related defects—where p5 and t1 are associated with a band of interface states) results in passivation of the interface states. Passivation is accompanied by a reduction in the measure of reverse leakage current associated with… Expand
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