Oxygen mediated synthesis of high quality InN nanowires above their decomposition temperature.


A novel method for synthesis of high quality InN nanowires, at temperatures well above their decomposition temperature, has been demonstrated by utilizing controlled oxygen flow in the growth chamber. Detailed structural and chemical analyses indicate that the nanowires consist of pure InN, with no evidence of In2O3 detected by any of the characterization… (More)
DOI: 10.1039/c3nr03991a

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