Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study

Abstract

and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study J. Bläsing, A. Krost, J. Hertkorn, F. Scholz, L. Kirste, A. Chuvilin, and U. Kaiser Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Universitätsplatz 2, D-39016 Magdeburg, Germany Institute of Optoelectronics, Ulm University… (More)

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