Oxygen adsorption on a Ge dosed Si(100) surface

@inproceedings{Surnev1992OxygenAO,
  title={Oxygen adsorption on a Ge dosed Si(100) surface},
  author={Sv. Surnev},
  year={1992}
}
Abstract The effect of submonolayer Ge coverages on the oxidation of a Si(100)−2 × 1 surface has been studied by means of Auger electron spectroscopy (AES), electron energy loss spectroscopy (EELS), low-energy electron diffraction (LEED) and work-function (WF) measurements. It has been found that the increase of the Ge coverage, θ Ge , causes a slight decrease of the initial sticking coefficient, S 0 , and a strong suppression of the oxygen uptake rate at moderate oxygen coverages, θ O . These… CONTINUE READING

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