Oxide based resistive RAM: ON/OFF resistance analysis versus circuit variability

@article{Aziza2014OxideBR,
  title={Oxide based resistive RAM: ON/OFF resistance analysis versus circuit variability},
  author={Hassen Aziza and Haithem Ayari and Santhosh Onkaraiah and Jean Michel Portal and Mathieu Moreau and Marc Bocquet},
  journal={2014 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)},
  year={2014},
  pages={81-85}
}
A deeper understanding of the impact of variability on Oxide-based Resistive Random Access Memory (so-called OxRRAM) is needed to propose variability tolerant designs to ensure the robustness of the technology. Although research has taken steps to resolve this issue, variability remains an important characteristic for OxRRAMs. In this paper, impact of variability on OxRRAM circuit performances is analysed quantitatively at a circuit level through electrical simulations. Variability is… CONTINUE READING

References

Publications referenced by this paper.
SHOWING 1-10 OF 19 REFERENCES

Sirakoulis

S. Hamdioui, H. Aziza, G. Ch
  • “Memristor based memories: Technology, design and test”, in Design & Technology of Integrated Systems In Nanoscale Era Conference, pp. 1.7
  • 2014
VIEW 1 EXCERPT

Investigation of the Impact of the Oxide Thickness and RESET conditions on Disturb in HfO2-RRAM integrated in a 65nm CMOS Technology

T. Diokh
  • in International Reliability Physics Symposium,
  • 2013
VIEW 2 EXCERPTS

SPICE level analysis of Single Event Effects in an OxRRAM cell

  • 2013 14th Latin American Test Workshop - LATW
  • 2013
VIEW 1 EXCERPT

Active “multi-fingers”: Test structure to improve MOSFET matching in sub-threshold area

  • 2012 IEEE International Conference on Microelectronic Test Structures
  • 2012
VIEW 1 EXCERPT

Dynamic ‘hour glass’ model for SET and RESET in HfO2 RRAM

  • 2012 Symposium on VLSI Technology (VLSIT)
  • 2012
VIEW 1 EXCERPT

10x10nm2 Hf/HfOx Crossbar Resistive RAM with Excellent Performance, Reliability and Low-Energy Operation

B.Govoreanu, al
  • Electron Devices Meeting,
  • 2011
VIEW 1 EXCERPT