Out-of-band exposure characterization with the SEMATECH Berkeley 0.3-NA microfield exposure tool

@inproceedings{George2009OutofbandEC,
  title={Out-of-band exposure characterization with the SEMATECH Berkeley 0.3-NA microfield exposure tool},
  author={S. George and P. Naulleau and Senajith B. Rekawa and E. Gullikson and C. D. Kemp},
  booktitle={Advanced Lithography},
  year={2009}
}
For the commercialization of extreme ultraviolet lithography (EUVL), discharge or laser produced, pulsed plasma light sources are being considered. These sources are known to emit into a broad range of wavelengths that are collectively referred to as the out-of-band (OOB) radiation by lithographers. Multilayer EUV optics reflect OOB radiation emitted by the EUV sources onto the wafer plane resulting in unwanted background exposure of the resist (flare) and reduced image contrast. The… Expand
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