Out-of-band exposure characterization with the SEMATECH Berkeley 0.3-NA microfield exposure tool

@inproceedings{George2009OutofbandEC,
  title={Out-of-band exposure characterization with the SEMATECH Berkeley 0.3-NA microfield exposure tool},
  author={Simi A. George and Patrick P. Naulleau and Senajith B. Rekawa and Eric M. Gullikson and Charles D. Kemp},
  booktitle={Advanced Lithography},
  year={2009}
}
For the commercialization of extreme ultraviolet lithography (EUVL), discharge or laser produced, pulsed plasma light sources are being considered. These sources are known to emit into a broad range of wavelengths that are collectively referred to as the out-of-band (OOB) radiation by lithographers. Multilayer EUV optics reflect OOB radiation emitted by the EUV sources onto the wafer plane resulting in unwanted background exposure of the resist (flare) and reduced image contrast. The… 
Out-of-band radiation mitigation at 10.6 μm by molecular absorbers in laser-produced plasma extreme ultraviolet sources
Out-of-band radiation in extreme ultraviolet (EUV) exposure tools remains one of the critical issues that must be addressed before the implementation of this lithography technique for high-volume
Ultraviolet out-of-band radiation studies in laser tin plasma sources
Out-of-band long wavelength emission measurements from high power, high-repetition-rate extreme-ultra-violet lithography (EUVL) laser plasma sources are imperative to estimating heat deposition in
Physical processes in EUV sources for microlithography
The source is an integral part of an extreme ultraviolet lithography (EUVL) tool. Such a source, as well as the EUVL tool, has to fulfil very high demands both technical and cost oriented. The EUVL
Black border with etched multilayer on EUV mask
EUV lithography is the most promising candidate for semiconductor device manufacturing of 1x nm half pitch and beyond. For the practical use, EUV mask with a thin absorber could be adopted because of
Thin absorber EUV mask with light-shield border of etched multilayer and its lithographic performance
When a thinner absorber mask is applied to EUVL for ULSI chip production, it becomes essential to introduce EUV light-shield border in order to suppress the leakage of EUV light from the adjacent
Quencher distribution engineering for out-of-band insensitive EUV resists: experiments and stochastic simulation
We investigated the effect of quencher type and loading concentration in OoB-insensitive EUV resists via actual exposure on the latest EUV scanner and stochastic simulation using Prolith. Model
EUV underlayer materials for 22nm HP and beyond
EUV lithography is expected to be an important technology for manufacturing 22 nm node and beyond in the semiconductor industry. To achieve the desired resist RLS performance for such fine feature

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