Out-of-band exposure characterization with the SEMATECH Berkeley 0.3-NA microfield exposure tool

  title={Out-of-band exposure characterization with the SEMATECH Berkeley 0.3-NA microfield exposure tool},
  author={Simi A. George and Patrick P. Naulleau and Senajith B. Rekawa and Eric M. Gullikson and Charles D. Kemp},
  booktitle={Advanced Lithography},
For the commercialization of extreme ultraviolet lithography (EUVL), discharge or laser produced, pulsed plasma light sources are being considered. These sources are known to emit into a broad range of wavelengths that are collectively referred to as the out-of-band (OOB) radiation by lithographers. Multilayer EUV optics reflect OOB radiation emitted by the EUV sources onto the wafer plane resulting in unwanted background exposure of the resist (flare) and reduced image contrast. The… 
Out-of-band radiation mitigation at 10.6 μm by molecular absorbers in laser-produced plasma extreme ultraviolet sources
Out-of-band radiation in extreme ultraviolet (EUV) exposure tools remains one of the critical issues that must be addressed before the implementation of this lithography technique for high-volume
Ultraviolet out-of-band radiation studies in laser tin plasma sources
Out-of-band long wavelength emission measurements from high power, high-repetition-rate extreme-ultra-violet lithography (EUVL) laser plasma sources are imperative to estimating heat deposition in
Physical processes in EUV sources for microlithography
The source is an integral part of an extreme ultraviolet lithography (EUVL) tool. Such a source, as well as the EUVL tool, has to fulfil very high demands both technical and cost oriented. The EUVL
Black border with etched multilayer on EUV mask
EUV lithography is the most promising candidate for semiconductor device manufacturing of 1x nm half pitch and beyond. For the practical use, EUV mask with a thin absorber could be adopted because of
Thin absorber EUV mask with light-shield border of etched multilayer and its lithographic performance
When a thinner absorber mask is applied to EUVL for ULSI chip production, it becomes essential to introduce EUV light-shield border in order to suppress the leakage of EUV light from the adjacent
Quencher distribution engineering for out-of-band insensitive EUV resists: experiments and stochastic simulation
We investigated the effect of quencher type and loading concentration in OoB-insensitive EUV resists via actual exposure on the latest EUV scanner and stochastic simulation using Prolith. Model
EUV underlayer materials for 22nm HP and beyond
EUV lithography is expected to be an important technology for manufacturing 22 nm node and beyond in the semiconductor industry. To achieve the desired resist RLS performance for such fine feature


Investigation of sensitivity of extreme ultraviolet resists to out-of-band radiation
A method to evaluate the sensitivity of photoresists used for extreme ultraviolet (EUV) lithography has been developed. EUV sources produce out-of-band radiation and the reflective optics used in EUV
Absolute evaluation of out-of-band radiation from laser-produced tin plasmas for extreme ultraviolet lithography
Out-of-band (OOB) radiation (at wavelengths longer than 130nm) from an extreme ultraviolet (EUV) light source reduces the precision of lithography. The energy of the OOB radiation from laser-produced
Advanced extreme ultraviolet resist testing using the SEMATECH Berkeley 0.3-NA microfield exposure tool
Microfield exposure tools (METs) continue to play a dominant role in the development of extreme ultraviolet (EUV) resists. Here we present an update on the SEMATECH Berkeley 0.3-NA MET and summarize
Extreme ultraviolet microexposures at the Advanced Light Source using the 0.3 numerical aperture micro-exposure tool optic
In an effort to continue the rapid pace of extreme ultraviolet (EUV) learning, the focus of developmental EUV lithography has shifted from low numerical aperture (NA) tools such as the 0.1NA
Absolute sensitivity calibration of extreme ultraviolet photoresists.
An independent sensitivity calibration of two baseline resists from the SEMATECH Berkeley MET tool performed at the Advanced Light Source Calibrations and Standards beamline shows the baseline resists to be approximately 1.9 times faster than previously thought based on calibration against the long standing resist standard.
Chemically amplified resists resolving 25 nm 1:1 line: space features with EUV lithography
We have investigated a number of key resist factors using EUV lithography including activation energy of deprotection. Our standard high activation resist material, MET-2D (XP5271F), is capable of
Fourier-synthesis custom-coherence illuminator for extreme ultraviolet microfield lithography.
A scanning Fourier synthesis illuminator that enables microfield extreme ultraviolet lithography to be performed on an intrinsically coherent synchrotron undulator beamline is presented.
EUV Sources for Lithography
This comprehensive volume, edited by a senior technical staff member at SEMATECH, is the authoritative reference book on EUV source technology. The volume contains 38 chapters contributed by leading
Handbook of Optical Constants of Solids
VOLUME ONE: Determination of Optical Constants: E.D. Palik, Introductory Remarks. R.F. Potter, Basic Parameters for Measuring Optical Properties. D.Y. Smith, Dispersion Theory, Sum Rules, and Their
Ldls laser-driven light source eq-1000 high brightness duv light source
  • (2007). http://www.energetiq.com/html/ldls.html.
  • 2007