Out-of-Plane Strain Effects on Physically Flexible FinFET CMOS

  title={Out-of-Plane Strain Effects on Physically Flexible FinFET CMOS},
  author={Mohamed T. Ghoneim and Nasir Alfaraj and Galo A. Torres-Sevilla and Hossain M. Fahad and Muhammad. M. Hussain},
  journal={IEEE Transactions on Electron Devices},
We present a comprehensive electrical performance assessment of hafnium silicate (HfSiOx) high-κ dielectric and titanium-nitride (TiN) metal-gate-integrated FinFET-based complementary-metal-oxide-semiconductor (CMOS) on flexible silicon on insulator. The devices were fabricated using the stateof-the-art CMOS technology and then transformed into flexible form by using a CMOS-compatible maskless deep reactive-ion etching technique. Mechanical out-of-plane stresses (compressive and tensile) were… 

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