Out-of-Plane Strain Effects on Physically Flexible FinFET CMOS

  title={Out-of-Plane Strain Effects on Physically Flexible FinFET CMOS},
  author={M. Ghoneim and Nasir Alfaraj and Galo A. Torres-Sevilla and H. Fahad and M. Hussain},
  journal={IEEE Transactions on Electron Devices},
We present a comprehensive electrical performance assessment of hafnium silicate (HfSiOx) high-κ dielectric and titanium-nitride (TiN) metal-gate-integrated FinFET-based complementary-metal-oxide-semiconductor (CMOS) on flexible silicon on insulator. The devices were fabricated using the stateof-the-art CMOS technology and then transformed into flexible form by using a CMOS-compatible maskless deep reactive-ion etching technique. Mechanical out-of-plane stresses (compressive and tensile) were… Expand
9 Citations

Figures from this paper

Mechanical Reliability of Flexible a-InGaZnO TFTs under Dynamic Stretch Stress
  • 3
Fraction of Insertion of the Channel Fin as Performance Booster in Strain-Engineered p-FinFET Devices With Insulator-on-Silicon Substrate
  • 5
  • Highly Influenced
Thermodynamic photoinduced disorder in AlGaN nanowires
  • 7
  • PDF


A 90-nm logic technology featuring strained-silicon
  • 625
  • PDF
Highly Flexible Microcrystalline Silicon n-Type TFT on PEN Bent to a Curvature Radius of 0.75 mm
  • 10
  • Highly Influential
NMOS and PMOS transistors fabricated in strained silicon/relaxed silicon-germanium structures
  • 113
FinFET scaling to 10 nm gate length
  • 527
  • PDF
Effect of out-of-plane properties of a polyimide film on the stress fields in microelectronic structures
  • 108
Flexible organic transistors and circuits with extreme bending stability.
  • 899
  • PDF
Nonlinear characteristics in fracture strength test of ultrathin silicon die
  • 17
Measurement of the Anisotropy of Young's Modulus in Single-Crystal Silicon
  • 56
  • Highly Influential