Out-of-Plane Strain Effects on Physically Flexible FinFET CMOS

@article{Ghoneim2016OutofPlaneSE,
  title={Out-of-Plane Strain Effects on Physically Flexible FinFET CMOS},
  author={M. Ghoneim and Nasir Alfaraj and Galo A. Torres-Sevilla and H. Fahad and M. Hussain},
  journal={IEEE Transactions on Electron Devices},
  year={2016},
  volume={63},
  pages={2657-2664}
}
We present a comprehensive electrical performance assessment of hafnium silicate (HfSiOx) high-κ dielectric and titanium-nitride (TiN) metal-gate-integrated FinFET-based complementary-metal-oxide-semiconductor (CMOS) on flexible silicon on insulator. The devices were fabricated using the stateof-the-art CMOS technology and then transformed into flexible form by using a CMOS-compatible maskless deep reactive-ion etching technique. Mechanical out-of-plane stresses (compressive and tensile) were… Expand

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