Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes

@article{Brown1991OscillationsUT,
  title={Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes},
  author={Elliott R. Brown and Johan S{\"o}derstr{\"o}m and Christopher D. Parker and Leonard J. Mahoney and Karen M. Molvar and T. C. Mcgill},
  journal={Applied Physics Letters},
  year={1991},
  volume={58},
  pages={2291-2293}
}
Oscillations have been obtained at frequencies from 100 to 712 GHz in InAs/AlSb double‐barrier resonant‐tunneling diodes at room temperature. The measured power density at 360 GHz was 90 W cm−2, which is 50 times that generated by GaAs/AlAs diodes at essentially the same frequency. The oscillation at 712 GHz represents the highest frequency reported to date from a solid‐state electronic oscillator at room temperature. 

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    2016 IEEE International Electron Devices Meeting (IEDM)
  • 2016
We report on our recent results of resonant tunneling diodes oscillating in the terahertz frequency range, including the structures for high frequency oscillation up to 1.92 THz at room temperature,
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