Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes
@article{Brown1991OscillationsUT, title={Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes}, author={E. R. Brown and J. S{\"o}derstr{\"o}m and C. Parker and L. J. Mahoney and K. Molvar and T. Mcgill}, journal={Applied Physics Letters}, year={1991}, volume={58}, pages={2291-2293} }
Oscillations have been obtained at frequencies from 100 to 712 GHz in InAs/AlSb double‐barrier resonant‐tunneling diodes at room temperature. The measured power density at 360 GHz was 90 W cm−2, which is 50 times that generated by GaAs/AlAs diodes at essentially the same frequency. The oscillation at 712 GHz represents the highest frequency reported to date from a solid‐state electronic oscillator at room temperature.
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