• DOI:10.1063/1.104902
• Corpus ID: 53364355

Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes

@article{Brown1991OscillationsUT,
  title={Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes},
  author={Elliott R. Brown and Johan S{\"o}derstr{\"o}m and Christopher D. Parker and Leonard J. Mahoney and Karen M. Molvar and T. C. Mcgill},
  journal={Applied Physics Letters},
  year={1991},
  volume={58},
  pages={2291-2293}
}

• E. Brown, J. Söderström, +3 authors T. C. Mcgill
• Published 20 May 1991
• Physics, Materials Science
• Applied Physics Letters

Oscillations have been obtained at frequencies from 100 to 712 GHz in InAs/AlSb double‐barrier resonant‐tunneling diodes at room temperature. The measured power density at 360 GHz was 90 W cm−2, which is 50 times that generated by GaAs/AlAs diodes at essentially the same frequency. The oscillation at 712 GHz represents the highest frequency reported to date from a solid‐state electronic oscillator at room temperature.