Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes
@article{Brown1991OscillationsUT, title={Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes}, author={Elliott R. Brown and Johan S{\"o}derstr{\"o}m and Christopher D. Parker and Leonard J. Mahoney and Karen M. Molvar and T. C. Mcgill}, journal={Applied Physics Letters}, year={1991}, volume={58}, pages={2291-2293} }
Oscillations have been obtained at frequencies from 100 to 712 GHz in InAs/AlSb double‐barrier resonant‐tunneling diodes at room temperature. The measured power density at 360 GHz was 90 W cm−2, which is 50 times that generated by GaAs/AlAs diodes at essentially the same frequency. The oscillation at 712 GHz represents the highest frequency reported to date from a solid‐state electronic oscillator at room temperature.
729 Citations
Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature
- Physics
- 2010
Fundamental oscillations up to 1.04 THz were achieved in resonant tunneling diodes at room temperature. A graded emitter and thin barriers were introduced in GaInAs/AlAs double-barrier resonant…
Fundamental oscillation up to 915GHz in InGaAs/AlAs resonant tunneling diodes integrated with slot antennas
- Physics2009 34th International Conference on Infrared, Millimeter, and Terahertz Waves
- 2009
A fundamental oscillation up to 915GHz was observed at room temperature in InGaAs/AlAs resonant tunneling diode integrated with planar slot antennas. By reducing the mesa area, parasitic capacitance…
Fundamental Oscillation of up to 831 GHz in GaInAs/AlAs Resonant Tunneling Diode
- Physics2009 IEEE International Conference on Indium Phosphide & Related Materials
- 2009
A fundamental oscillation of up to 831 GHz was observed at room temperature in GaInAs/AlAs resonant tunneling diodes integrated with planar slot antennas. The thickness of the collector spacer layer…
Voltage Controlled Harmonic Oscillation around 1THz in Resonant Tunneling Diodes Integrated with Slot Antennas
- Physics2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings
- 2006
The third harmonic oscillation around 1 THz at room temperature and its frequency change with bias voltage were observed in GaInAs/AlAs double-barrier resonant tunneling diodes integrated with slot…
Fundamental Oscillation up to 1.31 THz in Resonant Tunneling Diodes with Thin Well and Barriers
- Physics
- 2012
We report the dependence of oscillation frequency on the well and barrier thicknesses in a resonant tunneling diode (RTD) terahertz oscillator integrated with a planar slot antenna. The oscillation…
Operation of resonant-tunnelling-diode oscillators beyond tunnel-lifetime limit at 564 GHz
- Physics
- 2012
We present resonant-tunnelling-diode (RTD) oscillators, which are operating at frequencies up to 564 GHz. Due to heavy doping of the collector side of our diodes, the oscillators are operating beyond…
High-frequency nonlinear characteristics of resonant-tunnelling diodes
- Physics, Engineering
- 2011
The nonlinear response of resonant-tunnelling diodes (RTDs) is analysed theoretically at high frequencies (HFs), which are far above the diode’s tunnel-relaxation-time limit. We show that the HF I-V…
Frequency-tunable resonant-tunneling-diode terahertz oscillators applied to absorbance measurement
- Physics
- 2017
We show that frequency-tunable terahertz oscillators with resonant-tunneling diodes (RTDs) can be applied to absorbance measurement, using allopurinol as a specimen, which has a characteristic…
Voltage-Controlled Harmonic Oscillation at About 1 THz in Resonant Tunneling Diodes Integrated with Slot Antennas
- Physics
- 2007
Frequency change with bias voltage was observed in the third harmonic oscillation at about 1 THz in GaInAs/AlAs double-barrier resonant tunneling diodes integrated with slot antennas at room…
References
SHOWING 1-8 OF 8 REFERENCES
Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes
- Physics
- 1989
We report room‐temperature oscillations up to frequencies of 420 GHz in a GaAs resonant tunneling diode containing two 1.1‐nm‐thick AlAs barriers. These results are consistent with a recently…
Fundamental oscillations up to 200 GHz in resonant tunneling diodes and new estimates of their maximum oscillation frequency from stationary‐state tunneling theory
- Physics
- 1988
Fundamental oscillations have been measured up to 200 GHz in resonant‐tunneling diodes at room temperature. Oscillations in the range 102–112 GHz were achieved with diodes mounted in a WR‐6 waveguide…
Growth and characterization of high current density, high-speed InAs/AlSb resonant tunneling diodes
- Materials Science, Physics
- 1991
High quality resonant tunneling diodes have been fabricated from the InAs/AlSb material system (InAs quantum well and cladding layers, AlSb barriers) on (100)GaAs substrates. A diode with a…
Resonant tunneling diodes for switching applications
- Physics
- 1989
Rise times for simple pulse‐forming circuits are presented. Switching times for present best devices are in the range of 5–15 ps. An equivalent circuit model for resonant tunneling diodes inclusive…
Simulation of extrinsic bistability of resonant tunneling structures
- Physics, Engineering
- 1988
A simple biasing circuit for measuring current‐voltage characteristics of resonant tunneling double‐barrier structures exhibits extrinsic bistabilities due to oscillations, which we show through…
OSA proceedings on picosecond electronics and optoelectronics
- Physics
- 1989
This book presents an introduction to optical communications. Systems considerations of this important application of optoelectronics are used to provide the motivation for many of the papers that…
Picosecond switching time measurement of a resonant tunneling diode
- Physics
- 1988
Picosecond bistable operation has been experimentally observed for the first time in a double‐barrier resonant tunneling diode. A rise time of 2 ps was measured using the electro‐optic sampling…