• DOI:10.1063/1.104902
Corpus ID: 53364355

Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes

@article{Brown1991OscillationsUT,
  title={Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes},
  author={E. R. Brown and J. S{\"o}derstr{\"o}m and C. Parker and L. J. Mahoney and K. Molvar and T. Mcgill},
  journal={Applied Physics Letters},
  year={1991},
  volume={58},
  pages={2291-2293}
}

E. R. Brown, J. Söderström, +3 authors T. Mcgill

Published 1991

Materials Science

Applied Physics Letters

View PDF

Save to Library

Create Alert

Cite

Launch Research Feed

Oscillations have been obtained at frequencies from 100 to 712 GHz in InAs/AlSb double‐barrier resonant‐tunneling diodes at room temperature. The measured power density at 360 GHz was 90 W cm−2, which is 50 times that generated by GaAs/AlAs diodes at essentially the same frequency. The oscillation at 712 GHz represents the highest frequency reported to date from a solid‐state electronic oscillator at room temperature.