Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes

  title={Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes},
  author={E. R. Brown and J. S{\"o}derstr{\"o}m and C. Parker and L. J. Mahoney and K. Molvar and T. Mcgill},
  journal={Applied Physics Letters},
  • E. R. Brown, J. Söderström, +3 authors T. Mcgill
  • Published 1991
  • Materials Science
  • Applied Physics Letters
  • Oscillations have been obtained at frequencies from 100 to 712 GHz in InAs/AlSb double‐barrier resonant‐tunneling diodes at room temperature. The measured power density at 360 GHz was 90 W cm−2, which is 50 times that generated by GaAs/AlAs diodes at essentially the same frequency. The oscillation at 712 GHz represents the highest frequency reported to date from a solid‐state electronic oscillator at room temperature. 
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