Origin of transient Vth shift after erase and its impact on 2D/3D structure charge trap flash memory cell operations

@article{Park2012OriginOT,
  title={Origin of transient Vth shift after erase and its impact on 2D/3D structure charge trap flash memory cell operations},
  author={Jong Kyung Park and Dong-Il Moon and Yang-Kyu Choi and Seok-Hee Lee and Ki-Hong Lee and Seung Ho Pyi and Byung Jin Cho},
  journal={2012 International Electron Devices Meeting},
  year={2012},
  pages={2.4.1-2.4.4}
}
The mechanism of transient Vth shift after erase is studied in detail. It is concluded that the main mechanism is hole redistribution in the charge trap layer. A new erase scheme is proposed and demonstrated to reduce transient Vth shift. The impact of transient Vth shift on the 3D charge trap device is investigated, as well. 
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