Origin of large contact resistance in organic field-effect transistors

Abstract

The large contact resistance (R<sub>c</sub>) in organic field-effect transistors (OFET) is one of the main limitation factors which prevent the reliable operation and further reduction in device dimensions. In this paper, we report dependence of the R<sub>c</sub> on the gate dielectric materials, which means that the density of charge traps in access region… (More)

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