Origin of doping in quasi-free-standing graphene on silicon carbide.

@article{Ristein2012OriginOD,
  title={Origin of doping in quasi-free-standing graphene on silicon carbide.},
  author={Juergen Ristein and Samir Mammadov and Th Seyller},
  journal={Physical review letters},
  year={2012},
  volume={108 24},
  pages={
          246104
        }
}
We explain the robust p-type doping observed for quasi-free-standing graphene on hexagonal silicon carbide by the spontaneous polarization of the substrate. This mechanism is based on a bulk property of SiC, unavoidable for any hexagonal polytype of the material and independent of any details of the interface formation. We show that sign and magnitude of the polarization are in perfect agreement with the doping level observed in the graphene layer. With this mechanism, models based on… CONTINUE READING

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