Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

@article{Chichibu2006OriginOD,
  title={Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.},
  author={Shigefusa F. Chichibu and A. Uedono and Takeyoshi Onuma and Benjamin A Haskell and Arpan Chakraborty and Takahiro Koyama and Paul T Fini and Stacia Keller and Steven DenBaars and James S. Speck and Umesh K. Mishra and Shuji Nakamura and Shigeo Yamaguchi and Satoshi Kamiyama and Hiroshi Amano and Isamu Akasaki and Jung Han and Takayuki Sota},
  journal={Nature materials},
  year={2006},
  volume={5 10},
  pages={810-6}
}
Group-III-nitride semiconductors have shown enormous potential as light sources for full-colour displays, optical storage and solid-state lighting. Remarkably, InGaN blue- and green-light-emitting diodes (LEDs) emit brilliant light although the threading dislocation density generated due to lattice mismatch is six orders of magnitude higher than that in conventional LEDs. Here we explain why In-containing (Al,In,Ga)N bulk films exhibit a defect-insensitive emission probability. From the… CONTINUE READING
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