Origin of NBTI variability in deeply scaled pFETs

  title={Origin of NBTI variability in deeply scaled pFETs},
  author={Ben Kaczer and Tibor Grasser and Ph. J. Roussel and Jacopo Franco and Robin Degraeve and L.-{\AA}. Ragnarsson and Eddy Simoen and Guido Groeseneken and Hans Reisinger},
  journal={2010 IEEE International Reliability Physics Symposium},
The similarity between Random Telegraph Noise and Negative Bias Temperature Instability (NBTI) relaxation is further demonstrated by the observation of exponentially-distributed threshold voltage shifts corresponding to single-carrier discharges in NBTI transients in deeply scaled pFETs. A SPICE-based simplified channel percolation model is devised to confirm this behavior. The overall device-to-device ΔVth distribution following NBTI stress is argued to be a convolution of exponential… CONTINUE READING
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