Origin of NBTI variability in deeply scaled pFETs

@article{Kaczer2010OriginON,
  title={Origin of NBTI variability in deeply scaled pFETs},
  author={Ben Kaczer and Tibor Grasser and Ph. J. Roussel and Jacopo Franco and Robin Degraeve and L.-{\AA}. Ragnarsson and Eddy Simoen and Guido Groeseneken and Hans Reisinger},
  journal={2010 IEEE International Reliability Physics Symposium},
  year={2010},
  pages={26-32}
}
The similarity between Random Telegraph Noise and Negative Bias Temperature Instability (NBTI) relaxation is further demonstrated by the observation of exponentially-distributed threshold voltage shifts corresponding to single-carrier discharges in NBTI transients in deeply scaled pFETs. A SPICE-based simplified channel percolation model is devised to confirm this behavior. The overall device-to-device ΔVth distribution following NBTI stress is argued to be a convolution of exponential… CONTINUE READING
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References

Publications referenced by this paper.
Showing 1-10 of 27 references

Ph

  • B. Kaczer, T. Grasser
  • J. Rousse, J. Martin-Martinez, R. O’Connor, B. J…
  • 2008
Highly Influential
10 Excerpts

and C

  • H. Reisinger, T. Grasser, W. Gustin
  • Schlünder, “The Statistical Analysis of…
  • 2010
Highly Influential
4 Excerpts

and A

  • M.J.M. Pelgrom, A.C.J. Duinmaijer
  • P. G. Welbers, “Matching Properties of MOS…
  • 1989
Highly Influential
5 Excerpts

A

  • M. F. Bukhori, S. Roy
  • Asenov, “Simulation of statistical aspects of…
  • 2009
2 Excerpts

Comprehensive Analysis of Random Telegraph Noise Instability and Its Scaling in Deca – Nanometer Flash Memories

  • C. M. Compagnoni A. Ghetti, A. S. Spinelli, A. Visconti
  • IEEE T . Electron Dev .
  • 2009

Ph

  • B. Kaczer, T. Grasser, J. Martin-Martinez, E. Simoen, M. Aoulaiche
  • J. Roussel, and G. Groeseneken, “NBTI from the…
  • 2009

Ph

  • B. Kaczer, A. Veloso
  • J. Roussel, T. Grasser, and G. Groeseneken…
  • 2009

Th

  • T. Grasser, H. Reisinger, W. Goes
  • Aichinger, Ph. Hehenberger, P.-J. Wagner, M…
  • 2009
3 Excerpts