Orientational Dependence in Device Performances of InAs and Si Nanowire MOSFETs Under Ballistic Transport

@article{Shimoida2013OrientationalDI,
  title={Orientational Dependence in Device Performances of InAs and Si Nanowire MOSFETs Under Ballistic Transport},
  author={Kenta Shimoida and Yoshio Yamada and Hideaki Tsuchiya and Matsuto Ogawa},
  journal={IEEE Transactions on Electron Devices},
  year={2013},
  volume={60},
  pages={117-122}
}
We evaluate drive currents and consumption powers of InAs and Si nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs) with various crystal orientations, by using a ballistic MOSFET model coupled with tight-binding band structure calculation. We demonstrate that performance dependence on the wire orientation is not significant in InAs NWFETs compared to Si NWFETs, due to an isotropic nature of the Γ valley, and furthermore, a lower power switching is expected in InAs NWFETs even… CONTINUE READING

References

Publications referenced by this paper.
SHOWING 1-10 OF 23 REFERENCES

Perfor - mance comparison between pi - n tunneling transistors and conventional MOSFETs

  • M. S. Lundstrom, D. E. Nikonov
  • IEEE Trans . Electron Devices
  • 2009

Similar Papers

Loading similar papers…