Orientation and ion-implanted transverse effects in self-aligned GaAs MESFET's

@article{Chen1987OrientationAI,
  title={Orientation and ion-implanted transverse effects in self-aligned GaAs MESFET's},
  author={Chung-Hsu Chen and Andrzej Peczalski and M. S. Shur and Ho-Kyoon Chung},
  journal={IEEE Transactions on Electron Devices},
  year={1987},
  volume={34},
  pages={1470-1481}
}
The orientation dependence of the threshold voltage and device transconductance of ion-implanted GaAs FET's has been investigated and modeled. The threshold voltages of the devices along the [011] and [01\bar{1}] directions are different when the gate length is short (≤ 3 µm). Experimental results and theoretical calculations show that this is primarily due… CONTINUE READING