Orientation Dependence of the Low Field Mobility in Double-and Single-gate SOI FETs

@article{Sverdlov2006OrientationDO,
  title={Orientation Dependence of the Low Field Mobility in Double-and Single-gate SOI FETs},
  author={Viktor Sverdlov and Enzo Ungersboeck and Hans Kosina and Siegfried Selberherr},
  journal={2006 European Solid-State Device Research Conference},
  year={2006},
  pages={178-181}
}
The low field mobility in double- and single-gate structures is analyzed for (100) and (110) SOI substrate orientation. Due to volume inversion, mobility in double-gate ultra-thin body (110) SOI FETs is enhanced in comparison with the mobility of single-gate structures in the whole effective field range. In double-gate (100) structures the mobility decreases below the single-gate value for high effective fields. It is argued that the twice as high carrier concentration in double-gate FETs… CONTINUE READING

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