Organometallic molecules for semiconductor fabrication

@article{ShenaiKhatkhate1990OrganometallicMF,
  title={Organometallic molecules for semiconductor fabrication},
  author={Deodatta Vinayak Shenai-Khatkhate and Marjory B. Parker and A. E. D. Mcqueen and John Brian Mullin and David J. Cole-Hamilton},
  journal={Philosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences},
  year={1990},
  volume={330},
  pages={173 - 182}
}
Adduct purification of metal alkyls for use in metal-organic vapour-phase epitaxy is described and shown to give high purity alkyls of Al, Ga, In, Cd, Zn and Te. In most cases involatile Lewis bases are used to form dissociable adducts, but for tellurium alkyls, halides of mercury or cadmium are used. Alternative source materials such as higher alkyls, volatile adducts and mixed alkyls are discussed and new results on the stability of mixed alkyls of tellurium are presented. 
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Electrolysis of dimethylmagnesium in tetrahydrofuran (thf) with a gallium anode yields the adduct GaMe3·thf directly; the trialkylamine and trialkylphosphine adducts GaMe3·L (L = NEt3, PMe3, or PEt3)
Synthesis and thermal properties of adducts of trimethylindium with nitrogen-containing Lewis bases
Adducts of trimethylindium with a range of nitrogen-containing Lewis bases have been prepared, and their thermal properties investigated. No adducts formation is observed with triphenylamine or
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