Organic field-effect transistor memory devices using discrete ferritin nanoparticle-based gate dielectrics.

@article{Kim2013OrganicFT,
  title={Organic field-effect transistor memory devices using discrete ferritin nanoparticle-based gate dielectrics.},
  author={Beom Joon Kim and Yongmin Ko and Jeong Ho Cho and Jinhan Cho},
  journal={Small},
  year={2013},
  volume={9 22},
  pages={3784-91}
}
Organic field-effect transistor (OFET) memory devices made using highly stable iron-storage protein nanoparticle (NP) multilayers and pentacene semiconductor materials are introduced. These transistor memory devices have nonvolatile memory properties that cause reversible shifts in the threshold voltage (Vth ) as a result of charge trapping and detrapping in the protein NP (i.e., the ferritin NP with a ferrihydrite phosphate core) gate dielectric layers rather than the metallic NP layers… CONTINUE READING