Orbital Tuning of Tunnel Coupling in InAs/InP Nanowire Quantum Dots

  title={Orbital Tuning of Tunnel Coupling in InAs/InP Nanowire Quantum Dots},
  author={Zahra Sadre Momtaz and Stefano Servino and Valeria Demontis and Valentina Zannier and Daniele Ercolani and Francesca Rossi and Francesco Rossella and Lucia Sorba and Fabio Beltram and Stefano Roddaro},
  journal={Nano Letters},
  pages={1693 - 1699}
We report results on the control of barrier transparency in InAs/InP nanowire quantum dots via the electrostatic control of the device electron states. Recent works demonstrated that barrier transparency in this class of devices displays a general trend just depending on the total orbital energy of the trapped electrons. We show that a qualitatively different regime is observed at relatively low filling numbers, where tunneling rates are rather controlled by the axial configuration of the… Expand

Figures and Topics from this paper

Self-Catalyzed InSb/InAs Quantum Dot Nanowires
The self-catalyzed growth of InAs/InSb/InAs axial heterostructured nanowires with a single defect-free InSb quantum dot, on Si substrates, by chemical beam epitaxy is presented. Expand
Quantum-Dot Single-Electron Transistors as Thermoelectric Quantum Detectors at Terahertz Frequencies.
The rich few-electron physics is exploited to develop millimeter-wave nanodetectors employing as a sensing element an InAs/InAs0.3P0.7 quantum-dot nanowire, embedded in a single-Electron transistor. Expand
Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays
This review accounts for the recent progresses in substrate nanopatterning methods, strategies and approaches that overall constitute the preliminary step towards the bottom-up growth of arrays of vertically aligned semiconductor nanowires with a controlled location, size and morphology of each nanowire. Expand
Magnetic tuning of tunnel coupling between InAsP double quantum dots in InP nanowires
We study experimentally and theoretically the in-plane magnetic field dependence of the coupling between dots forming a vertically stacked double dot molecule. The InAsP molecule is grown epitaxiallyExpand


Manipulation of electron orbitals in hard-wall InAs/InP nanowire quantum dots.
We present a novel technique for the manipulation of the energy spectrum of hard-wall InAs/InP nanowire quantum dots. By using two local gate electrodes, we induce a strong transverse electric fieldExpand
Electrostatic spin control in InAs/InP nanowire quantum dots.
Very robust voltage-controlled spin transitions in few-electron quantum dots are demonstrated and transport measurements in this regime allow the breakdown of the standard alternate up/down spin filling scheme and unambiguously show singlet-triplet spin transitions. Expand
Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots.
The results demonstrate that integrated InAs/InP QDs provide a promising platform for electron tunneling spectroscopy in InAs nanowires, which can readily be contacted by a variety of superconducting materials to investigate subgap states in proximitized NW regions, or be used to characterize thermoelectric nanoscale devices in the quantum regime. Expand
Few electron double quantum dots in InAs/InP nanowire heterostructures.
The resonant current through the double dot is found to depend on the orbital coupling between states of different radial symmetry, and the charging energies are well described by a capacitance model if next-neighbor capacitances are taken into account. Expand
Parallel-Coupled Quantum Dots in InAs Nanowires.
The combination of hard-wall barriers to source and drain, shallow interdot tunnel barriers, and very high single-particle excitation energies allow an order of magnitude tuning of the strength for the first intramolecular bond. Expand
Thermoelectric Conversion at 30 K in InAs/InP Nanowire Quantum Dots.
High-temperature thermoelectric conversion in InAs/InP nanowire quantum dots is demonstrated by taking advantage of their strong electronic confinement and investigating the evolution of the electronic figure of merit ZT as a function of the quantum dot configuration. Expand
Few-Electron Quantum Dots in Nanowires
We demonstrate transport spectroscopy on bottom-up grown few-electron quantum dots in semiconductor nanowires. The dots are defined by InP double barrier heterostructures in InAs nanowiresExpand
Tunable effective g factor in InAs nanowire quantum dots
We report tunneling spectroscopy measurements of the Zeeman spin splitting in InAs few-electron quantum dots. The dots are formed between two InP barriers in InAs nanowires with a wurtzite crystalExpand
Tuning the Two-Electron Hybridization and Spin States in Parallel-Coupled InAs Quantum Dots.
Large single-particle energy separations and factors enable detailed studies of the B-field-induced transition from a singlet-to-triplet ground state as a function of t, and investigates how the magnitude of the spin-orbit-induced Singlet-Triplet anticrossing depends on t. Expand
Electrostatic spin control in multi-barrier nanowires
We demonstrate that a consistent breakdown of the standard even–odd filling scheme in the Coulomb blockade regime can be easily obtained in a quantum dot containing two wells strongly coupled by aExpand