Optoelectronic properties in vertically aligned ZnO/Si-nanopillars

@article{Lee2012OptoelectronicPI,
  title={Optoelectronic properties in vertically aligned ZnO/Si-nanopillars},
  author={Hsin-Yi Lee and Yuan-Ming Chang and Wen-Shou Tseng and Pin-Hsu Kao and Hau-Wei Wang and Hung-Ming Tai and Leh-Rong Chang and Chih-Ming Lin and Jenh-Yih Juang},
  journal={2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO)},
  year={2012},
  pages={1-2}
}
An effective method of fabricating vertically aligned silicon nanopillars (Si-NPs) was realized by using the self-assembled silver nanodots as natural metal-nanomask for subsequent etching process. Ultrathin (~9 nm) ZnO films were deposited on the Si-NPs by atomic layer deposition to enhance the field emission property. The turn-on field defined by the 10 μA/cm2 current density criterion is ~ 0.74 V/μm with an estimated β ~ 1.33×104. The low turn-on field and marked enhancement in β were… CONTINUE READING