Optoelectronic mixing with high-frequency graphene transistors

@article{Montanaro2021OptoelectronicMW,
  title={Optoelectronic mixing with high-frequency graphene transistors},
  author={A Montanaro and W. Wei and Domenico De Fazio and Ugo Sassi and Giancarlo Soavi and Patrizia Aversa and Andrea C. Ferrari and Henri Happy and Pierre Legagneux and Emiliano Pallecchi},
  journal={Nature Communications},
  year={2021},
  volume={12}
}
Graphene is ideally suited for optoelectronics. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We show how high speed optoelectronic mixing can be achieved with high frequency (~20 GHz bandwidth) graphene field effect transistors (GFETs). These devices mix an electrical signal injected into the GFET gate and a modulated optical signal onto a single layer graphene (SLG) channel. The photodetection mechanism and the resulting photocurrent sign depend… 
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References

SHOWING 1-10 OF 108 REFERENCES
Thirty Gigahertz Optoelectronic Mixing in Chemical Vapor Deposited Graphene.
TLDR
An optoelectronic mixer based on chemical vapor-deposited graphene transferred on an oxidized silicon substrate is reported, demonstrated for the first time, and frequency downconversion to 100 MHz is shown.
Optoelectronic Mixer Based on Graphene FET
We present optoelectronic mixing phenomenon in graphene FET (GFET) and give a brief analysis for the first time. Demonstrated by a measurement system, two operating modes of optoelectronic mixer
Graphene field-effect transistors with gigahertz-frequency power gain on flexible substrates.
TLDR
These devices represent the only reported technology to achieve gigahertz-frequency power gain at strain levels above 0.5% and demonstrate the potential of CVD graphene to enable a broad range of flexible electronic technologies which require both high flexibility and RF operation.
Graphene mode-locked ultrafast laser.
TLDR
The optoelectronic properties of graphene are exploited to realize an ultrafast laser and pave the way to graphene-based photonics.
Controlled Generation of a p-n Junction in a Waveguide Integrated Graphene Photodetector.
TLDR
A graphene photodetector integrated on a silicon slot-waveguide, acting as a dual gate to create a p-n junction in the optical absorption region of the device, which exhibits a 3 dB bandwidth of 65 GHz, which is the highest value reported for a graphene-based photodetsector.
Graphene photonics and optoelectronics
The richness of optical and electronic properties of graphene attracts enormous interest. Graphene has high mobility and optical transparency, in addition to flexibility, robustness and environmental
High Responsivity, Large-Area Graphene/MoS2 Flexible Photodetectors
TLDR
Flexible photodetectors for visible wavelengths fabricated by stacking centimeter-scale chemical vapor deposited graphene (SLG) and single layer CVD MoS2, both wet transferred onto a flexible polyethylene terephthalate substrate make them attractive for wearable applications.
State-of-the-art graphene high-frequency electronics.
TLDR
D devices with intrinsic cutoff frequency above 300 GHz are reported, based on both wafer-scale CVD grown graphene and epitaxial graphene on SiC, thus surpassing previous records on any graphene material.
Graphene-based integrated photonics for next-generation datacom and telecom
TLDR
It is shown that graphene-based integrated photonics could enable ultrahigh spatial bandwidth density, low power consumption for board connectivity and connectivity between data centres, access networks and metropolitan, core, regional and long-haul optical communications.
Graphene-based mid-infrared room-temperature pyroelectric bolometers with ultrahigh temperature coefficient of resistance
TLDR
This work presents an uncooled, mid-infrared photodetector, where the pyroelectric response of a LiNbO3 crystal is transduced with high gain into resistivity modulation for graphene, leading to TCRs up to 900% K−1 and the ability to resolve temperature variations down to 15 μK.
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