Optoelectronic mixing with high-frequency graphene transistors

  title={Optoelectronic mixing with high-frequency graphene transistors},
  author={A Montanaro and W. Wei and Domenico De Fazio and Ugo Sassi and Giancarlo Soavi and Patrizia Aversa and Andrea C. Ferrari and Henri Happy and Pierre Legagneux and Emiliano Pallecchi},
  journal={Nature Communications},
Graphene is ideally suited for optoelectronics. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We show how high speed optoelectronic mixing can be achieved with high frequency (~20 GHz bandwidth) graphene field effect transistors (GFETs). These devices mix an electrical signal injected into the GFET gate and a modulated optical signal onto a single layer graphene (SLG) channel. The photodetection mechanism and the resulting photocurrent sign depend… 
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