Optoelectronic Properties Modulated by Means of Change in Lattice Sites of Impurity in LiNbO3 Crystals

@inproceedings{Feng1993OptoelectronicPM,
  title={Optoelectronic Properties Modulated by Means of Change in Lattice Sites of Impurity in LiNbO3 Crystals},
  author={X. M. Feng},
  year={1993}
}
This paper discusses the actual possibility of altering artificially certain optoelectronic properties of LiNbO3 crystals by means of change in lattice site of a few Me3+ ions in the crystals. A new lattice site Cr3+ defect in Cr-doped LiNbO3 vapour transport equilibration has been displayed as a practical example.