Optimum doping profile for minimum ohmic resistance and high-breakdown voltage

@article{Hu1979OptimumDP,
  title={Optimum doping profile for minimum ohmic resistance and high-breakdown voltage},
  author={Chenming Hu},
  journal={IEEE Transactions on Electron Devices},
  year={1979},
  volume={26},
  pages={243-244}
}
  • Chenming Hu
  • Published 1979 in IEEE Transactions on Electron Devices
The optimum doping profile of a lightly doped layer that introduces the minimum series resistance and sustains a given junction breakdown voltage is derived. The theory applies to a one-dimensional Schottky diode and qualitatively to the collector or drain doping profiles of transistors. The minimum series resistance is found to be about 3.7 × 10-9V\min{B}\max{2.6}Ω.cm2for an n silicon layer. The optimum doping profile can be closely approximated by a conventional uniformly doped n-n+structure. 
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