Optimizing boron junctions through point defect and stress engineering using carbon and germanium co-implants

@inproceedings{Moroz2005OptimizingBJ,
  title={Optimizing boron junctions through point defect and stress engineering using carbon and germanium co-implants},
  author={Victor Moroz and Yong-Seog Oh and Dipu Pramanik and H. Graoui and Majeed A. Foad},
  year={2005}
}
We report the fabrication of p+∕n junctions using Ge+, C+, and B+ co-implantation and a spike anneal. The best junction exhibits a depth of 26nm, vertical abruptness of 3nm∕decade, and sheet resistance of 520Ohm∕square. The junction location is defined by where the boron concentration drops to 1018cm−3. These junctions are close to the International Technology Roadmap specifications for the 65nm technology node and are achieved by careful engineering of amorphization, stresses, and point… CONTINUE READING