Optimizing SRAM bitcell reliability and energy for IoT applications


This paper compares six different 8T SRAM bitcells targeting different design space requirements such as reliability and low power/energy for Internet of Things (IoT) applications. Different bitcells leverage the varying characteristics of highthreshold (high-VT) and standard-threshold (standard-VT) devices to affect SRAM metrics like write margin (WM), Data Retention Voltage (DRV), Hold Static Noise Margin (HSNM), Read Static Noise Margin (RSNM), write and read energy, standby leakage power, and variability. The reliability for each bitcell over process (intraand inter-die variation) and temperature variation is also evaluated. Measured results for a commercial 130nm test chip compare the most promising two 8T bitcell structures targeting low leakage and low energy. Keywords—VMIN, high-VT, standard-VT, multi-VT, Variation Index, Write Margin, robustness.

DOI: 10.1109/ISQED.2016.7479149
Citations per Year

Citation Velocity: 8

Averaging 8 citations per year over the last 2 years.

Learn more about how we calculate this metric in our FAQ.

Cite this paper

@inproceedings{Patel2016OptimizingSB, title={Optimizing SRAM bitcell reliability and energy for IoT applications}, author={Harsh N. Patel and Farah B. Yahya and Benton H. Calhoun}, booktitle={ISQED}, year={2016} }