Corpus ID: 39015422

Optimizing GaN / A 1 GaN Multiple Quantum Well Structures by TimeResolved Photoluminescence

@inproceedings{Li2003OptimizingG,
  title={Optimizing GaN / A 1 GaN Multiple Quantum Well Structures by TimeResolved Photoluminescence},
  author={J. Li and K. Zeng and E. Shin and I. Lin and H. X. Jiangt},
  year={2003}
}
We present the results of picosecond time-resolved photoluminescence (PL) measurements for GaN/A1Ga1N MQWs with varying structural parameters, grown by metalorganic chemical vapor deposition under the optimal (iaN-like growth conditions. We have shown that the optimal GaN/A1GaN (x 0.2) MQW structures for UV light emitter applications are those with well widths ranging from 12 and 42 A and barrier widths ranging from 40 to 80 A. The decreased quantum efficiency in GaN/AlGa1 N MQWs with well… Expand