Optimization of Sub-Melt Laser Anneal: Performance and Reliability

@article{Severi2006OptimizationOS,
  title={Optimization of Sub-Melt Laser Anneal: Performance and Reliability},
  author={S. Severi and E. Augendre and D. Thirupapuliyur and K. Ahmed and S. Felch and Vishal Parihar and F. Soleiman Nouri and Th.Y. Hoffman and Takeshi Nodac and B. J. O'Sullivan and Ju{\'a}rez Ramos and Enrique San Andr{\'e}s and Luigi Pantisano and An De Keersgieter and R. J. Schreutelkamp and Dominique Jennings and Soumik Mahapatra and Victor Moroz and Kristin De Meyer and P. P. Absil and M. Jurczak and S. Biesemans},
  journal={2006 International Electron Devices Meeting},
  year={2006},
  pages={1-4}
}
A thermo-mechanical stress model (TMS) is presented to explain the impact of sub-melt laser anneal (LA) on SiON dielectric and on the overall transistor performance. An Lgmin reduction of 15nm/5nm for nMOS/pMOS over our poly-Si/SiON reference, with 8% capacitance and 10% source and drain resistance (RSD) improvement, is demonstrated. Best device performance and NBTI immunity are reached by lowering the laser power and optimizing the nitrogen and fluorine profile. This minimizes the increase of… CONTINUE READING

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