Optimization of RF-22nm FDSOI figures of merit with 3D TCAD simulation

Abstract

The aim of this study is to illustrate the efficiency of TCAD for simulating RF devices in advanced technology nodes and identify optimization paths. A strategy involving 3D simulation and a multilayered description of the resistive gate is proposed, followed by a calibration step of the TCAD setup against measurements. Then, various effects impacting the… (More)

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