Optimization of NEMS pressure sensors with a multilayered diaphragm using silicon nanowires as piezoresistive sensing elements

@inproceedings{Lou2012OptimizationON,
  title={Optimization of NEMS pressure sensors with a multilayered diaphragm using silicon nanowires as piezoresistive sensing elements},
  author={Liang Lou and Songsong Zhang and Woo-Tae Park and J. M. Tsai and Dim-Lee Kwong and Chengkuo Lee},
  year={2012}
}
A pressure sensor with a 200 μm diaphragm using silicon nanowires (SiNWs) as a piezoresistive sensing element is developed and optimized. The SiNWs are embedded in a multilayered diaphragm structure comprising silicon nitride (SiNx) and silicon oxide (SiO2). Optimizations were performed on both SiNWs and the diaphragm structure. The diaphragm with a 1.2 μm SiNx layer is considered to be an optimized design in terms of small initial central deflection (0.1 μm), relatively high sensitivity (0.6… CONTINUE READING
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A new process for CMOS MEMS capacitive sensors with high sensitivity and thermal stability

  • S STan, C YLiu, L KYeh, Y HChiu, Y JHsuK
  • J. Micromech. Microeng
  • 2011

Gate - bias - controlled sensitivity and SNR enhancement in a nanowire FET pressure sensor

  • Y Kanda, A Yasukawa
  • J . Micromech . Microeng .
  • 2011

Post-CMOS selective electroplating technique for the improvement of CMOS-MEMS accelerometers

  • C LiuY, Tsai M-H, Tang T-L, W Fang
  • J. Micromech. Microeng
  • 2011

Monolithic integration of a micromachined piezoresistive flow sensor

  • D Li, T Zhao, Z Yang, D Zhang
  • J. Micromech. Microeng
  • 2010

Ultrasensitive nanowire pressure sensor makes its debut

  • B Soon, P Neuzil, C Wong, J Reboud, H Feng, C Lee
  • Procedia Eng
  • 2010
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