Optimization of MFIS structures containing poly(vinylidene-fluoride trifluoroethylene) for non-volatile memory applications

@inproceedings{Henkel2010OptimizationOM,
  title={Optimization of MFIS structures containing poly(vinylidene-fluoride trifluoroethylene) for non-volatile memory applications},
  author={Karsten Henkel and Bernd Seime and Ioanna Paloumpa and Klaus T. M{\"u}ller and Dieter Schmeisser and Angewandte Physik-Sensorik},
  year={2010}
}
In the paper, we report on ways to optimize metal–ferroelectric–insulator–semiconductor (MFIS) stacks in terms of the thickness combination of the ferroelectric and the buffering insulator layers in order to reduce the operation voltage of MFIS based non-volatile memory elements. The stack contains poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) as a ferroelectric layer. We discuss the optimization of the deposition of this material in order to produce thin films with high… CONTINUE READING

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