Optimization of LDMOS array design for SOA and hot carrier lifetime
@article{Strachan2003OptimizationOL, title={Optimization of LDMOS array design for SOA and hot carrier lifetime}, author={Andy Strachan and Douglas Brisbin}, journal={ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings.}, year={2003}, pages={84-87} }
Optimization of LDMOS devices to meet safe operating area (SOA) and hot carrier lifetime targets is a current challenge for process development. This work focuses on novel results in the use of layout techniques and cell design to improve both SOA and hot carrier reliability of LDMOS arrays. Specific improvements to cell based array layouts that increase SOA and hot carrier lifetime for fixed transistor architecture are reported.
12 Citations
Optimizing the hot carrier reliability of N-LDMOS transistor arrays
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Hot-carrier reliability of 20V MOS transistors in 0.13 mum CMOS technology
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Substrate Current Independent Hot Carrier Degradation in NLDMOS Devices
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Automotive and telecom applications often require voltages in the 20-30V range. These circuits combine high performance CMOS with a high voltage MOS transistor. A possible choice for the high voltage…
Effect of Photo Misalignment on N-LDMOS Hot Carrier Device Reliability
- Engineering2006 IEEE International Integrated Reliability Workshop Final Report
- 2006
Power management devices often require operation in the 20 V to 30 V range. A common choice for the power MOS driver is an n-channel lateral DMOS (N-LDMOS) device. An advantage of N-LDMOS device is…
Photo Misalignment Impact on the Hot Carrier Reliability of Lateral DMOS Devices
- Engineering2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual
- 2007
Power management devices often require operation in the 20 V to 30 V range. A common choice for the power MOS driver is an n-channel lateral DMOS (N-LDMOS) device. An advantage of N-LDMOS device is…
Anomalous Safe Operating Area and Hot Carrier Degradation of NLDMOS Devices
- EngineeringIEEE Transactions on Device and Materials Reliability
- 2006
Automotive and telecom applications often require voltages in the 20-30 V range. These circuits combine high-performance CMOS with a high-voltage MOS transistor. A possible choice for the…
Scalable Spice Modeling of Integrated Power LDMOS Device Using a Cell-Based Building Block Approach
- Engineering2008 20th International Symposium on Power Semiconductor Devices and IC's
- 2008
This paper illustrates a scalable Spice modeling method for an integrated power LDMOS device based on a multi-cell array structure. Depending on the location in the array (corner, edge, inner), three…
Design of a monolithic 2 MHz fast transient voltage regulator chip
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The Earth is mobile. There is a huge market for mobile power nowadays and in the near future. Efficient performance, functionality, small profile and low cost are the most wanted features for mobile…
Part II: RF, ESD, HCI, SOA, and Self Heating Concerns in LDMOS Devices Versus Quasi-Saturation
- EngineeringIEEE Transactions on Electron Devices
- 2018
Various LDMOS device design parameters to mitigate quasi-saturation (QS) have been identified. Based on this, a set of independent and mixed device designs to mitigate QS, while maximizing the device…
Design of a monolithic high frequency fast transient buck for portable application
- Engineering2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551)
- 2004
The earth is mobile. There is a huge market for mobile power management ICs today and in the future. Fast transient response, efficient performance, small profile and low cost are the most desired…
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