Optimization and scaling limit forecast of nitrided gate oxide using an equivalent nitride/oxide (N/O) stack model

@article{Chang2004OptimizationAS,
  title={Optimization and scaling limit forecast of nitrided gate oxide using an equivalent nitride/oxide (N/O) stack model},
  author={V. S. Chang and C.-C. Chen and Ying Jin and C. -H. Chen and T. Lee and S.-C. Chen and M. Liang},
  journal={2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)},
  year={2004},
  pages={363-366}
}
A semi-empirical model was developed to calculate the equivalent oxide thickness (EOT) and leakage current of nitrided gate oxide by hypothetically dividing the nitrided oxide into a nitride/oxide (N/O) stack. The calculations agree well with the experimental data (R/sup 2/ > 0.99) for various nitrided oxides with EOT ranging from 12 to 23 /spl Aring/. A model-based strategy for the optimization of nitrided oxide is presented and demonstrated by a nitrided oxide sample which meets both the EOT… CONTINUE READING

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