Optimal design of SiC MOSFETs for 20kW DCDC converter

Abstract

SWicoii Carbide (SiC) MOSFET, enabling high frequency, high temperature and high power density, are attractive for power electronics applications. However, due to the limited area of a single chip, paralleling SiC MOSFETs is a necessary approach to increase the capacity of the power module. In this work, targeted at 20kW DC/DC converter for HEV application… (More)

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