Optically Stimulated Deep-Level Impedance Spectroscopy Application to an n-GaAs Scholtky Diode

@inproceedings{Arikan2004OpticallySD,
  title={Optically Stimulated Deep-Level Impedance Spectroscopy Application to an n-GaAs Scholtky Diode},
  author={M. C. Arikan and Jennifer Abele and J. S. Blakemore and A. Hisei and S. Srinivasan and Pratima Agarwal and Mark E. Orazem and James Scully and Michael D Kendig and L. H. GarcIa-Bubio and Claude Deslouis},
  year={2004}
}
Chemical etching for highly sensitive detection of defects in singleand polycrystalline silicon was investigated. Slow defect delineation was studied in a HF-HN0,-CH3C0,H system with CH3C0,H concentrations over 50% and micropit delineation etchants were developed. Micropit delineation etchants delineate defects with extremely small defect-energy and show… CONTINUE READING