Optical studies of individual InAs quantum dots in GaAs: few-particle effects

@article{Landin1998OpticalSO,
  title={Optical studies of individual InAs quantum dots in GaAs: few-particle effects},
  author={Landin and Miller and Pistol and Pryor and Samuelson},
  journal={Science},
  year={1998},
  volume={280 5361},
  pages={262-4}
}
Optical emission from individual strained indium arsenide (InAs) islands buried in gallium arsenide (GaAs) was studied. At low excitation power density, the spectra from these quantum dots consist of a single line. At higher excitation power density, additional emission lines appeared at both higher and lower energies, separated from the main line by about 1 millielectron volt. At even higher excitation power density, this set of lines was replaced by a broad emission peaking below the original… CONTINUE READING
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