Optical properties of SiO/sub x/ nanostructured films by pulsed-laser deposition

  • X. W. Chen, Y.F. Lu
  • Published 2005 in
    (CLEO). Conference on Lasers and Electro-Optics…

Abstract

SiO/sub x/ nanostructured films were formed by pulsed-laser deposition (PLD) of Si. The photoluminescence band at 1.6-2.1 eV shifts with ambient gas pressure, substrate temperature and post-deposition processing, which supports the quantum confinement effect theory. 

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Cite this paper

@article{Chen2005OpticalPO, title={Optical properties of SiO/sub x/ nanostructured films by pulsed-laser deposition}, author={X. W. Chen and Y. F. Lu}, journal={(CLEO). Conference on Lasers and Electro-Optics, 2005.}, year={2005}, volume={3}, pages={1745-1747 Vol. 3} }