Optical investigation of type II GaSb/GaAs self-assembled quantum dots

@inproceedings{Alonsolvarez2007OpticalIO,
  title={Optical investigation of type II GaSb/GaAs self-assembled quantum dots},
  author={Diego Alonso-{\'A}lvarez and B Al{\'e}n and Jorge M. Garc{\'i}a and Jose Mar{\'i}a Ripalda},
  year={2007}
}
We have studied the emission and absorption properties of type II GaSb /GaAs quantum dots embedded in a p-i-n photodiode. The excitation power evolution provides clear signatures of the spatially separated confinement of electrons and holes in these nanostructures. We have estimated the confinement potential for the holes to be 500 meV, leading to an intense room temperature emission assisted by recapture processes from the wetting layer. Photocurrent measurements show strong absorption in the… CONTINUE READING

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