Optical gain in GaAsBi/GaAs quantum well diode lasers

@inproceedings{Marko2016OpticalGI,
  title={Optical gain in GaAsBi/GaAs quantum well diode lasers},
  author={Igor Pavlovich Marko and Christopher A. Broderick and Shirong R. Jin and Peter Ludewig and Wolfgang Stolz and Kerstin Volz and Judy Rorison and Eoin P. O’Reilly and Stephen John Sweeney},
  booktitle={2016 International Semiconductor Laser Conference (ISLC)},
  year={2016}
}
Optical gain, absorption and spontaneous emission spectra for GaAs<sub>0.978</sub>Bi<sub>0.022</sub>/GaAs laser diodes are measured experimentally and compared with theory. Internal optical losses of 10-15 cm<sup>-1</sup> and peak modal gain of 24 cm<sup>-1</sup> are measured at threshold. The results of calculations showed excellent agreement with the experiment, key for future laser design.