Optical characterization of highly n-type doped Ge0.95Sn0.05 rod antennas on Si(001) substrates

@article{Berkmann2018OpticalCO,
  title={Optical characterization of highly n-type doped Ge0.95Sn0.05 rod antennas on Si(001) substrates},
  author={F. Berkmann and L. Augel and M. B. Schilling and A. Berrier and D. Schwarz and David Wei{\ss}haupt and Michael Oehme and Joerg Schulze and Inga A. Fischer},
  journal={2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)},
  year={2018},
  pages={0032-0035}
}
Plasmonic excitations in metal nanostructures can be used to control and manipulate optical energy in the visible and infrared spectrum and have been used to enable biosensing, to enhance absorption and quantum yields for photovoltaics and to enhance the energy efficiency of light-emitting devices. For light at mid-infrared (MIR) wavelengths, metals become less suitable for plasmonic applications as a result of the high Drude losses. At those wavelengths, highly doped semiconductors are… CONTINUE READING