Optical bistability in semiconductors

@inproceedings{Miller1981OpticalBI,
  title={Optical bistability in semiconductors},
  author={David A. B. Miller and S. Desmond Smith and Colin T. Seaton},
  year={1981}
}
Detailed results are presented on optical bistability (OB) and two-beam optical transistor (transphasor) action in simple, one-element Fabry-Perot devices, with the semiconductor InSb using a CW CO laser near the bandgap region, and OB for semiconductors in general is discussed. OB and multistability are seen in transmission and reflection at 5 K. At 77 K, n_{2} \simeq 3 \times 10^{-3} cm2/W [corresponding to an effective \chi^{(3)} \sim 1 ESU] is measured and OB is observed at ∼8 mW… CONTINUE READING

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