Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD.

Abstract

In this paper we study the optical properties of nanoporous gallium nitride (GaN) epitaxial layers grown by chemical vapour deposition on non-porous GaN substrates, using photoluminescence, cathodoluminescence, and resonant Raman scattering, and correlate them with the structural characteristic of these films. We pay special attention to the analysis of the… (More)
DOI: 10.1088/1361-6528/aa7e9d

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Cite this paper

@article{Mena2017OpticalAS, title={Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD.}, author={Josu{\'e} Mena and Joan Josep Carvajal and Oscar Martinez and Juan Jim{\'e}nez and Vitaly Z. Zubialevich and Peter James Parbrook and Francesc D{\'i}az and Magdalena Aguil{\'o}}, journal={Nanotechnology}, year={2017}, volume={28 37}, pages={375701} }