Optical and photorefractive properties of InP:Ti: a new photorefractive semiconductor.

Abstract

The optical and photorefractive properties of Ti-doped InP are investigated. Four-wave mixing at wavelengths of 1.06 and 1.32 microm has been observed for the first time to our knowledge in semi-insulating InP:Ti. Room-temperature diffraction efficiencies for zero applied bias are larger than efficiencies measured previously for InP:Fe because of the absence of bipolar photoconductivity. Photoconductivity is observed out to 2 microm, which raises the possibility of photorefractive mixing at longer wavelengths than previously explored.

Cite this paper

@article{Nolte1989OpticalAP, title={Optical and photorefractive properties of InP:Ti: a new photorefractive semiconductor.}, author={David D. Nolte and Dag H. Olsen and Eric M. Monberg and P M Bridenbaugh and Alastair M. Glass}, journal={Optics letters}, year={1989}, volume={14 22}, pages={1278-80} }