Optical Hall effect in the integer quantum Hall regime.

  title={Optical Hall effect in the integer quantum Hall regime.},
  author={Yohei Ikebe and Takahiro Morimoto and Ryuichi Masutomi and Tohru Okamoto and Hideo Aoki and Ryo Shimano},
  journal={Physical review letters},
  volume={104 25},
Optical Hall conductivity σ{xy}(ω) is measured from the Faraday rotation for a GaAs/AlGaAs heterojunction quantum Hall system in the terahertz-frequency regime. The Faraday rotation angle (∼ fine-structure constant ∼ mrad) is found to significantly deviate from the Drude-like behavior to exhibit a plateaulike structure around the Landau-level filling ν=2. The result, which fits with the behavior expected from the carrier localization effect in the ac regime, indicates that the plateau structure… Expand
Theory for optical Hall conductivity in the trilayer graphene in the quantum Hall regime
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The integer quantum Hall effect is a well-studied phenomenon at frequencies below about 100 Hz. The plateaus in high-frequency Hall conductivity were experimentally proven to retain up to 33 GHz, butExpand
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  • R. Shimano
  • Physics
  • 2011 International Conference on Infrared, Millimeter, and Terahertz Waves
  • 2011
Terahertz Hall effect of a GaAs/AlGaAs two-dimensional electron gas system in the integer quantum Hall regime and also of an itinerant ferromagnet SrRuO3 exhibiting the anomalous Hall effect areExpand
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The results detect the quantum plateaus in the Faraday and Kerr rotations at precisely the quantum Hall steps that hallmark the Dirac electrons, with the rotation angle defined by the fine-structure constant. Expand
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Spin-split heavy-hole gases in strained germanium quantum wells were characterized by polarisation-resolved terahertz time-domain spectroscopy. Effective masses, carrier densities, g-factors,Expand


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We reveal from numerical study that the optical Hall conductivity sigma(xy)(omega) has a characteristic feature even in the ac ( approximately THz) regime in that the Hall plateaus are retained bothExpand
We have studied the conductivity peak in the transition region between the two lowest integer Quantum Hall states using transmission measurements of edge magnetoplasmons. The width of the transitionExpand
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A universal behavior for the three lowest Landau levels is obtained in agreement with the universality prediction of the field-theoretic approach to the metal-insulator transition in the quantum Hall effect. Expand
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We report on the time-domain terahertz (THz) magneto-optical Kerr spectroscopy in the frequency range from 0.5 to 2.5 THz. The developed technique employs reflection geometry, enabling high-frequencyExpand
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When a conducting layer is placed in a strong perpendicular magnetic field, there exist current-carrying electron states which are localized within approximately a cyclotron radius of the sampleExpand
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A model is introduced for Anderson localisation in the integer quantum Hall regime. The model represents a system with a disordered potential that varies slowly on the scale of the magnetic length,Expand
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It is shown that the quantization of the Hall conductivity of two-dimensional metals which has been observed recently by Klitzing, Dorda, and Pepper and by Tsui and Gossard is a consequence of gaugeExpand
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The Hall conductance of a two-dimensional electron gas has been studied in a uniform magnetic field and a periodic substrate potential U. The Kubo formula is written in a form that makes apparent theExpand
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The authors present results showing that the plateau of quantised Hall resistance in the Si inversion layer can be removed by increasing the frequency. Evidence is presented on hole-like behaviour atExpand
Critical localization in two-dimensional Landau quantization.
  • Aoki, Ando
  • Physics, Medicine
  • Physical review letters
  • 1985
The localization in two-dimensional disordered electron systems in strong magnetic fields is investigated by the finite-size scaling method, and the inverse localization length is found to have a novel critical behavior near the center of the Landau band. Expand