Operation of functional circuit elements using BEOL-transistor with InGaZnO channel for on-chip high/low voltage bridging I/Os and high-current switches

@article{Kaneko2012OperationOF,
  title={Operation of functional circuit elements using BEOL-transistor with InGaZnO channel for on-chip high/low voltage bridging I/Os and high-current switches},
  author={K. Kaneko and H. Sunamura and M. Narihiro and S. Saito and N. Furutake and M. Hane and Y. Hayashi},
  journal={2012 Symposium on VLSI Technology (VLSIT)},
  year={2012},
  pages={123-124}
}
Functional circuit elements based on novel BEOL-transistors with a wide-band-gap oxide semiconductor InGaZnO (IGZO) film are integrated onto LSI Cu-interconnects, and their operations are demonstrated. High-current comb-type transistors show excellent Ion/Ioff ratio (>;108) and high-Vd operation with linear area dependence, realizing area-saving compact high-current BEOL switches. Successful operation of voltage-controlled inverter switches with high-Vd enables on-chip bridging I/Os between… Expand

Figures from this paper

Film-profile-engineered IGZO thin-film transistors with gate/drain offset for high voltage operation
Effects of Gate Dielectric and Process Treatments on the Electrical Characteristics of IGZO TFTs With Film Profile Engineering
Fabrication and Characterization of Film Profile Engineered ZnO TFTs With Discrete Gates
Film-Profile Engineered InGaZnO Thin-Film Transistors With Self-Aligned Bottom Gates
...
1
2
...