One-Time-Programmable Memory in LTPS TFT Technology With Metal-Induced Lateral Crystallization

  title={One-Time-Programmable Memory in LTPS TFT Technology With Metal-Induced Lateral Crystallization},
  author={Lin Li and Chi On Chui and Jin He and Mansun Chan},
  journal={IEEE Transactions on Electron Devices},
A simple and reliable one-time-programmable (OTP) memory for low-temperature polysilicon thin-film-transistor technology with metal-induced lateral crystallization (MILC) is developed. The antifuse memory element is based on the breakdown of thin silicon dioxide deposited on smooth surface achieved by MILC. The effects of crystallization process and electrode configurations on the memory characteristics, including statistical variations, are studied. A read current margin of 106 is achieved for… CONTINUE READING
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