On-wafer inductance and resistance characterization of sub-5pH deep silicon via (DSV)

Abstract

A low parasitic inductance ground for SiGe power amplifiers has been realized using a deep silicon via (DSV). The inductance of the DSV is approximately one order of magnitude smaller than the thru-wafer-via (TWV) inductance of ∼21 pH [1] enabling a ground path for power amplifiers in common emitter configuration with literally no parasitic inductance. In… (More)

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